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BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z High forward current transfer ratio hFE Excellent HFE Linearity. Complements the 2SD1819A.
Production specification
2SB1218AW
Pb
Lead-free
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APPLICATIONS
z For general purpose amplification.
ORDERING INFORMATION
Type No. 2SB1218AW Marking BQ1/BR1/BS1
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value -45 Units V
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous
-45 -7 -200
V V mA
Collector Dissipation Junction and Storage Temperature
150 -55~150
mW ℃
Document number: BL/SSSTF034 Rev.A
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