BL 2SB1218AW
PNP Silicon Transistor
| Part No. | 2SB1218AW |
|---|---|
| Datasheet | 2SB1218AW Download |
| Manufacturer |  BL |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
z z z High forward current transfer ratio hFE Excellent HFE Linearity. Complements the 2SD1819A. Production specification 2SB1218AW Pb Lead-freeAPPLICATIONS
z For general purpose amplification. ORDERING INFORMATION Type No. 2SB1218AW Marking BQ1/BR1/BS1 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value -45 Units V Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous -45 -7 -200 V V mA Collector Dissipation Junction and Storage Temperature 150 -55~150 mW ℃ Document number: BL/SSSTF034 Rev.A 1 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Production specification 2SB1218AWELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat) fT Cob Test conditions IC=-10μA,IE=0 IC=-2mA,IB=0 IE=-10μA,IC=0 VCB=-...
