Galaxy Century Microelectronics 2SB1218A
PNP Silicon Transistor
| Part No. | 2SB1218A |
|---|---|
| Datasheet | 2SB1218A Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High forward current transfer ratio hFE● Excellent HFE Linearity.
● Complements the 2SD1819A. Pb Lead-free
APPLICATIONS
● For general purpose amplification. Production specification 2SB1218A ORDERING INFORMATION Type No. Marking 2SB1218A BQ/BR/BS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -7 IC Collector Current -Continuous -200 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F034 Rev.A 1 Production specification PNP Silicon Epitaxial Planar Transistor 2SB1218AELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO E
