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2SB1218A - PNP Silicon Transistor

Key Features

  • High forward current transfer ratio hFE.
  • Excellent HFE Linearity.
  • Complements the 2SD1819A. Pb Lead-free.

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PNP Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE  Excellent HFE Linearity.  Complements the 2SD1819A. Pb Lead-free APPLICATIONS  For general purpose amplification. Production specification 2SB1218A ORDERING INFORMATION Type No. Marking 2SB1218A BQ/BR/BS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -7 IC Collector Current -Continuous -200 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F034 Rev.A www.gmesemi.