2SB1217 Datasheet and Specifications PDF

The 2SB1217 is a PNP SILICON POWER TRANSISTOR.

Key Specifications

PackageTO-126
Pins3
Length9 mm
Width12 mm
Max Operating Temp150 °C
Datasheet4U Logo
Part Number2SB1217 Datasheet
ManufacturerNEC
Overview . .
Part Number2SB1217 Datasheet
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 ·Minimum Lot-to-Lot variations f. rwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gai.

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