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2SB1215 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low collector-to-emitter saturation voltage.
  • Excllent linearity of hFE.
  • Small-sized package permitting 2SB1215/2SD1815- applied sets to be made small and slim.
  • High fT.
  • Fast switching time. Package Dimensions unit:mm 2045B [2SB1215/2SD1815] unit:mm 2044B [2SB1215/2SD1815] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low collector-to-emitter saturation voltage. · Excllent linearity of hFE. · Small-sized package permitting 2SB1215/2SD1815- applied sets to be made small and slim. · High fT. · Fast switching time.