The 2SB1225 is a Epitaxial Planar Silicon Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SB1225 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview | . . |
| Part Number | 2SB1225 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Complement to type 2SD1827 ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·Suitable for use in control of motor d. unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE=? IC=-5A ; IB=-10mA. |
| Part Number | 2SB1225 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -5A) ·Large Current Capability and Wide ASO. ·Low collector-to-emitter saturation voltage ·Complement to Type 2SD1827 ·Minimum Lot-to-Lot variat. TERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA VBE(sat) Base-Emitter Saturation V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Verical | 31468 | 616+ : 0.6093 USD 1000+ : 0.5619 USD 10000+ : 0.501 USD 100000+ : 0.4198 USD |
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| Rochester Electronics | 31468 | 100+ : 0.5416 USD 500+ : 0.4874 USD 1000+ : 0.4495 USD 10000+ : 0.4008 USD |
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| Win Source | 2600 | 75+ : 0.7842 USD 180+ : 0.6436 USD 280+ : 0.6235 USD 385+ : 0.6034 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| B1225 | SANYO | 2SB1225 |