The 2SB1236 is a Silicon PNP Power Transistor.
| Part Number | 2SB1236 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·High breakdown voltage. (BVCEO = -120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SD1857 ·Minimum Lot-to-Lot variations for robust device
perfor.
n Voltage IC= -1A; IB= -0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A ; VCE= -5V
fT
Current-Gain *Bandwidth Product IC= -0.1A ; VCE= -5V COB O. |
| Part Number | 2SB1236 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | ROHM |
| Overview |
Transistors
Power Transistor (−120V, −1.5A)
2SB1236
2SB1236
zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance.
(Typ. 30pF at VCB = −10V) 3) High transition fre.
1) High breakdown voltage. (BVCEO = *120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = *10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO *120 Collector-emitter volt. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Worldway Electronics | 11791 | 7+ : 0.1784 USD 10+ : 0.1749 USD 100+ : 0.1695 USD 500+ : 0.1642 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| 2SB1236A | ROHM | Power Transistor |