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2SB1254 Datasheet

The 2SB1254 is a Silicon PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SB1254
ManufacturerPanasonic
Overview Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1894 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 S. q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): <
*2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings
*160
*140
*5
*12
*7 70 3 150
*55 to +150 .
Part Number2SB1254
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS ·Power amplification PINNING PIN 1 2 3. r cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ; IB=0 IC=-6A ;IB=-6mA IC=-6A ;IB=-6mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=1MHz 2000 5000 MIN.
Part Number2SB1254
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 ·Minimum Lot-to-Lot variations for robust device performa. O Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -6mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 ICEO Collector Cutoff Current VCE= -140V; IB= 0 IEBO Emitter Cu.

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