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2SB1258 Datasheet

The 2SB1258 is a Silicon PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SB1258
ManufacturerSanken
Overview (3 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –100 –6 –6(Pulse–10) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB12. 6typ tf (µs) 0.5typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C
* V CE Characteristics (Typical)
*6 A 3.
* 4 2. V CE ( sat )
* I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V )
*3 I C
* V BE Temperature Charact.
Part Number2SB1258
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·Complement to type 2SD1785 ·High DC current gain ·DARLINGTON APPLICATIONS ·Driver for solenoid ,relay and motor and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.. e Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A; IB=-6mA IC=-3A; IB=-6mA VCB=-100V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-2V IE=0.2A ; VCE=-12V IE=0; f=1MHz;VCB=-10V 1000.
Part Number2SB1258
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@IC= -3A ·Complement to Type 2SD1785 ·Minimum Lot-to-Lot variations for robust device performance an. CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -6mA -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE=0 -1.

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Part Number Manufacturer Description
B1258 Sanken 2SB1258