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2SB1259 Datasheet

The 2SB1259 is a Silicon PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SB1259
ManufacturerSanken
Overview Darlington 2SB1259 (3 k Ω)(1 0 0Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) Application : Driver for Solenoid, Relay and Motor and General Purp. 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A)
*50mA I C
* V CE Characteristics (Typical)
*15
*20mA
*10mA
*5mA .
Part Number2SB1259
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -4V, IC= -5A) ·Large Current Capability ·Complement to Type 2SD2081 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . tter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -10mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -5A; VC.