| Part Number | 2SB1275 Datasheet |
|---|---|
| Manufacturer | ROHM |
| Overview |
2SB1275
PNP -1.5A -160V Middle Power Transistor
Parameter
VCEO IC
Value
-160V -1.5A
lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V
.
1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V
4) Lead Free/RoHS Compliant.
lOutline
CPT3
Collector
Base
Emitter
2SB1275 (SC-63) |
2SB1275 Datasheet and Specifications PDF
The 2SB1275 is a Power Transistor.
Key Specifications
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SB1275 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Suitable for middle power drivers ·High voltage:VCEO=-160V ·Complementary NPN types:2SD1918 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . Emitter breakdown voltage IC=-1mA -160 V BVEBO Emitter-Base breakdown voltage IE=-50uA -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -100mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -1A; IB= -100mA VC. |
| Part Number | 2SB1275 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Power Transistor 2SB1275 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage.(BVCEO = -160V) +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15. High breakdown voltage.(BVCEO = -160V) +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 Typ. 30pF at VCB = 10V High transition frequency.(fT = 50MHZ) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collecto. |