| Part Number | 2SB1420 Datasheet |
|---|---|
| Manufacturer | Sanken |
| Overview |
(2 k Ω) (80 Ω) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1420 –120 –120 –6 –16(Pulse–26) –1 80(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C
2SB142.
C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C * V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) *26 0 *2 V CE ( sa t ) * I B Characteristics (Typical) *3 I C * V BE Temperature Characteristics (Typical) *16 (V CE = *4V) *4 0m m A A A *12. |
2SB1420 Datasheet and Specifications PDF
The 2SB1420 is a Silicon PNP Transistor.
Key Specifications
| Mount Type | Through Hole |
|---|---|
| Max Operating Temp | 150 °C |
| Part Number | 2SB1420 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@IC= -8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC. P. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -16mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A; IB= -16mA -2.5 V ICBO Collector Cutoff Current VCB= -120V; IE=0 -10 μA IEBO Emitt. |