| Part Number | 2SB1649 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -10A ·Complement to Type 2SD2561 ·Minimum Lot-to-Lot variations for robust . V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -10mA VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -10mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 ICBO Collector Cutoff Current VCB= -150V; IE= 0 hFE DC C. |
2SB1649 Datasheet and Specifications PDF
The 2SB1649 is a PNP Transistor.
Key Specifications
| Mount Type | Through Hole |
|---|
| Part Number | 2SB1649 Datasheet |
|---|---|
| Description | Silicon PNP Transistor |
| Manufacturer | Sanken |
| Overview |
(7 0 Ω ) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –150 –150 –5 –15 –1 85(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SB1649
sElectrical Ch.
mA) *10 IB2 (mA) 10 ton (µs) 0.7typ tstg (µs) 1.6typ tf (µs) 1.1typ 5.45±0.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C * V CE Characteristics (Typical) *15 *2 m A *1.5mA V CE ( sa t ) * I B Characteristics (Typical) Collector-Emitter Saturation Voltage V . |