Datasheet Details
| Part number | 2SB1649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.15 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1649-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB1649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.15 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1649-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -10A ·Complement to Type 2SD2561 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio,series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 85 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1649 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1649 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1649 | Silicon PNP Transistor | Sanken |
| Part Number | Description |
|---|---|
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| 2SB1603 | PNP Transistor |
| 2SB1604 | PNP Transistor |
| 2SB1605 | PNP Transistor |
| 2SB1606 | PNP Transistor |
| 2SB1607 | PNP Transistor |
| 2SB1624 | PNP Transistor |
| 2SB1625 | PNP Transistor |