Datasheet Details
| Part number | 2SB1640 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.89 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1640-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1640 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.89 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1640-INCHANGE.pdf |
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -1.5V(Max.)@IC= -2A ·Complement to Type 2SD2525 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 1.8 W 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1640 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1640 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC = –50mA, IB = 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1640 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SB1640 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1642 | PNP Transistor |
| 2SB1647 | PNP Transistor |
| 2SB1649 | PNP Transistor |
| 2SB1603 | PNP Transistor |
| 2SB1604 | PNP Transistor |
| 2SB1605 | PNP Transistor |
| 2SB1606 | PNP Transistor |
| 2SB1607 | PNP Transistor |
| 2SB1624 | PNP Transistor |
| 2SB1625 | PNP Transistor |