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2SB1642 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Collector Power Dissipation- : PC= 25 W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2.5A, IB= -0.25A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2.5A, IB= -0.25A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.