| Part Number | 2SB722 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and r. akdown Voltage IE= -1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V;. |
2SB722 Datasheet and Specifications PDF
The 2SB722 is a PNP Transistor.
| Part Number | 2SB722 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·High current capability ·High power dissipation APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) a. ase-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-10A; IB=-1A IC=-2A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V 50 MIN -160 -160 -5 2SB722 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICB. |