2SB850 Datasheet

The 2SB850 is a GENERAL PURPOSE POWER AMPLIFIER.

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Part Number2SB850
ManufacturerNew Jersey Semi-Conductor
Overview Free Datasheet http:// . .
Part Number2SB850
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.2V(Max) @IC= -5A ·Wide Area of Safe Operation ·Complement to Type 2SD1117 ·Minimum. c Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1m.