| Part Number | 2SB858 |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type 2SD1133/1134 APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum rat. IC=-0.5A ; VCE=-4V CONDITIONS SYMBOL 2SB857 2SB858 MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -5 -1.0 -1.0 -1 60 35 15 MHz 320 V V V V µA V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown votage Colle. |
2SB858 Datasheet
The 2SB858 is a SILICON POWER TRANSISTOR.
| Part Number | 2SB858 |
|---|---|
| Description | Silicon PNP Transistor |
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB857, 2SB858
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
A.
V V µA Test conditions I C = *10 µA, IE = 0 I C = *50 mA, RBE = ∞ I E = *10 µA, IC = 0 VCB = *50 V, IE = 0 VCE = *4 V I C = *1 A*2 I C = *0.1 A*2 Min *70 *50 *5 * 60 35 * * * Typ * * * * * * * * 15 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) I C = *2 A. |
| Part Number | 2SB858 |
|---|---|
| Description | Silicon PNP Transistor |
| Manufacturer | Renesas |
| Overview | To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric . ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semi. |
| Part Number | 2SB858 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1134 ·Minimum Lot-to-Lot variations for robust dev. 0mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -4V ICBO Collector Cutoff Current VCB= -50V ; I. |