| Part Number | 2SC1454 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier . Voltage IC=3A; IB= 0.3A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE DC Current Gain IC=1A; VCE= 5V ICBO Collector Cutoff Current VCB= 300V ; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 MIN TYP. MAX UNIT 1.0. |
2SC1454 Datasheet and Specifications PDF
The 2SC1454 is a NPN Transistor.
Key Specifications
| Max Operating Temp | 140 °C |
|---|
| Part Number | 2SC1454 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·High breakdown voltage:VCEO=250V(min) APPLICATIONS ·For use in low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outli. ion voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 20 fT Transition frequency IC=0.5A ; VCE=12V . |