2SC1740 Datasheet and Specifications PDF

ST 2SC1740 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups Q, R, S and E. according to its DC current gain. On specia.

e at IE=50µA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=12V, IC=2mA Output Capacitance at VCB=12V, f=1MHz COB 2 3.5 pF fT 180 MHz VCE(sat) 0.4 V IEBO 0.1 µA ICBO 0.1 µA V(BR)EBO 5 V V(BR)CEO 50 V .

2SC1740 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups Q, R, S and E. according to its DC current gain. On special r.

.

.

.