2SC2625 Datasheet and Specifications PDF

The 2SC2625 is a Silicon NPN Power Transistors.

Key Specifications

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Part Number2SC2625 Datasheet
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic gen. ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown .
Part Number2SC2625 Datasheet
DescriptionTRIPLE TRANSISTOR
ManufacturerFuji Electric
Overview Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - . .
Part Number2SC2625 Datasheet
DescriptionNPN EPITAXIAL SILICON TRANSISTOR
ManufacturerUnisonic Technologies
Overview UNISONIC TECHNOLOGIES CO.,LTD 2SC2625 HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability NPN EPITAXIAL SILICON TRANSISTOR 1 TO-3P *Pb-free plating pr. * High voltage, high speed switching * High reliability NPN EPITAXIAL SILICON TRANSISTOR 1 TO-3P *Pb-free plating product number: 2SC2625L PIN INFORMATION PIN NO. 1 2 3 PIN NAME Base Collector Emitter ORDERING INFORMATION Order Number Normal Lead free plating 2SC2625-T3P-T .

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