| Part Number | 2SC2736 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview | 2SC2736 Silicon NPN Epitaxial Application • UHF/VHF frequency converter • Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2736 Absolute Maximum Ratings (Ta = 25°C) Item Col. = 12 V, IC = 2 mA, f = 200 MHz, f OSC = 230 MHz (0dBm) VCC = 12 V, IC = 7 mA, f OSC = 300 MHz VCC = 12 V, IC = 7 mA, f OSC = 930 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer. |
2SC2736 Datasheet and Specifications PDF
The 2SC2736 is a Silicon NPN Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC2736 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon NPN Epitaxial 2SC2736 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 . 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage tem. |
| Part Number | 2SC2736 Datasheet |
|---|---|
| Description | Silicon NPN RF Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for.
15V; IE= 0
0.7
V
0.5 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
30
200
fT
Current-Gain *Bandwidth Product IC= 5mA ; VCE= 10V 2300 MHz COB Output Capacitance CG-1 Conversion Gain CG-2 Conversion Gain NF Noise Figure IE= 0 ; VCB= 10V;f= 1.0MHz VCC=12V,IC=2mA;f=200MHz; fosc=230MHz; VC. |