| Part Number | 2SC3011 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm · High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), . r cut-off current Emitter cut-off current Collecter-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collecter output capacitance Reverse transfer capacitance Input capacitance ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) Cob Cre Cib VC. |
2SC3011 Datasheet and Specifications PDF
The 2SC3011 is a Silicon NPN epitaxial planer Transistor.
Key Specifications
| Max Operating Temp | 125 °C |
|---|
| Part Number | 2SC3011 Datasheet |
|---|---|
| Description | Silicon NPN Epitaxial Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 High fT : fT=6.5GHz 0.55 Low Noise Figure: . +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 High fT : fT=6.5GHz 0.55 Low Noise Figure: NF=2.3dB(Typ.) f=1GHz +0.1 1.3-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Colle. |