| Part Number | 2SC3122 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · High gain: Gpe = 24dB (typ.) (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 . , IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCE = 12 V, VAGC = 1.4 V, f = 200 MHz VCC = 12 V, GR = 30dB, f = 200 MHz (Note) ¾ ¾ 30 60 ¾ 400 20 ¾ 3.6 ¾ 100 nA ¾ 100 nA ¾¾ V 150 300 0.3 0.45 pF 650 ¾ MHz 24 28 dB 2.0 3.2 dB 4.4 5.1 V. |
2SC3122 Datasheet and Specifications PDF
The 2SC3122 is a Silicon NPN Transistor.
Key Specifications
| Max Operating Temp | 125 °C |
|---|
| Part Number | 2SC3122 Datasheet |
|---|---|
| Description | Silicon NPN RF Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low Noise: NF= 2.0dB TYP. @ f= 200MHz
APPLICATIONS ·Designed for TV VHF RF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNI.
Current
VCB= 25V; IE= 0
0.1
μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
0.1
μA
hFE
DC Current Gain
IC= 2mA ; VCE= 10V
60
300
Cre
Feed-Back Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
0.3
0.45
pF
fT
Current-Gain *Bandwidth Product IC= 2mA ; VCE= 10V 400 650 MHz Gpe Power Gain . |
| Part Number | 2SC3122 Datasheet |
|---|---|
| Description | Silicon NPN Epitaxial Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon NPN Epitaxial 2SC3122 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low Noise :NF=2.0dB(Typ.)(f=200MHZ) Excellent Forward . 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO. |