2SC3122 Description
@ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 30 V ICBO Collector Cutoff Current VCB= 25V;.
2SC3122 is Silicon NPN RF Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SC3122 | Silicon NPN Transistor | |
Kexin Semiconductor |
2SC3122 | Silicon NPN Epitaxial Transistor |
@ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 30 V ICBO Collector Cutoff Current VCB= 25V;.