2SC3125 Description
·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 25 V ICBO Collector Cutoff Current VCB= 30V;.
2SC3125 is Silicon NPN RF Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SC3125 | Silicon NPN Transistor | |
Galaxy Microelectronics |
2SC3125 | Silicon Epitaxial Planar Transistor |
Kexin Semiconductor |
2SC3125 | Silicon NPN epitaxial planar type Transistor |
·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 25 V ICBO Collector Cutoff Current VCB= 30V;.