2SC3125 Overview
·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 25 V ICBO Collector Cutoff Current VCB= 30V;.
| Part number | 2SC3125 |
|---|---|
| Datasheet | 2SC3125_InchangeSemiconductor.pdf |
| File Size | 206.25 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
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·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 25 V ICBO Collector Cutoff Current VCB= 30V;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SC3125 | Silicon NPN Transistor | Toshiba Semiconductor | |
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2SC3125 | Silicon Epitaxial Planar Transistor | GME |
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2SC3125 | Silicon NPN epitaxial planar type Transistor | Kexin |
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