| Part Number | 2SC3125 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3125 2SC3125 TV Final Picture IF Amplifier Applications Unit: mm · Good linearity of fT Maximum Ratings (Ta = 25°C) Characteristics Collec. mA, IB = 1.5 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 1 mA, f = 30 MHz VCE = 10 V, IC = 10 mA Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 25 ¾ ¾ V 20 70 200 ¾ ¾ 0.2 V ¾ ¾ 1.5 ¾ 1.1 1.6 pF ¾ ¾ 25 ps 250 600 ¾ MHz Marking 1 2003-03-19 2SC3125 2 2003-03-19 2SC3125 3 2003-03-19 2SC3. |
2SC3125 Datasheet and Specifications PDF
The 2SC3125 is a Silicon NPN Transistor.
Key Specifications
| Max Operating Temp | 125 °C |
|---|
| Part Number | 2SC3125 Datasheet |
|---|---|
| Description | Silicon Epitaxial Planar Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Silicon Epitaxial Planar Transistor
FEATURES
Good Linearity of fT.
Pb
Lead-free
Production specification
2SC3125
ORDERING INFORMATION
Type No.
Marking
2SC3125
HH
SOT-23
Package Code SOT-23
.
* Good Linearity of fT. Pb Lead-free Production specification 2SC3125 ORDERING INFORMATION Type No. Marking 2SC3125 HH SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage . |
| Part Number | 2SC3125 Datasheet |
|---|---|
| Description | Silicon NPN epitaxial planar type Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon NPN Epitaxial Planar Type 2SC3125 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Features Good Lineality of fT +0.1 . Good Lineality of fT +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature St. |
| Part Number | 2SC3125 Datasheet |
|---|---|
| Description | Silicon NPN RF Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO . ter Cutoff Current VEB= 3V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 20 200 VCE(sat) Collector-Emitter Saturation Voltage IC= 15mA ; IB= 1.5mA 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 15mA ; IB= 1.5mA 1.5 V COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz. |