Galaxy Century Microelectronics 2SC3125
Silicon Epitaxial Planar Transistor
| Part No. | 2SC3125 |
|---|---|
| Datasheet | 2SC3125 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Good Linearity of fT. Pb Lead-free Production specification 2SC3125 ORDERING INFORMATION Type No. Marking 2SC3125 HH SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 4 IC Collector Current -Continuous 50 IB Base Current 25 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA mA mW ℃ C185 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SC3125ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector-base output capacitance V(B
