Toshiba 2SC3125
Silicon NPN Transistor
| Part No. | 2SC3125 |
|---|---|
| Datasheet | 2SC3125 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● Good linearity of fT
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 4 50 25 150 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter Saturation voltage Base-emitter Collector output capacitance Collector-base time constant Transition frequency Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) Cob Cc･rbb’ fT VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 IC = 10 mA, IB = 0 VCE = 10 V, IC = 10 mA IC = 15 mA, IB = 1.5 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 1 mA, f = 30 MHz VCE = 10 V, IC = 10 mA Min Typ. Max Unit...
