Inchange Semiconductor 2SC3125
Silicon NPN RF Transistor
| Part No. | 2SC3125 |
|---|---|
| Datasheet | 2SC3125 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Good Linearity of fTAPPLICATIONS
●Designed for TV Final Picture IF amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website： Free Datasheet INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3125 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 25 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 20 200 VCE(sat) Collector-Emitter Saturation Voltage IC= 15mA ; IB= 1.5mA 0.2 V VBE(sat) Base-Emitter Saturati...
