Low Noise and High Gain NF = 2.2 dB TYP.
@VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP.
Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.
| Part number | 2SC3127 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.96 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet |
 2SC3127 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| 2SC3127 | Silicon NPN Transistor | Hitachi Semiconductor |
| 2SC3127 | Silicon NPN Epitaxial Transistor | Renesas |
| 2SC3120 | Silicon NPN Transistor | Toshiba Semiconductor |
| 2SC3120 | Silicon NPN Transistor | Kexin |
| 2SC3121 | Silicon NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |
| 2SC3123 | Silicon NPN RF Transistor |
| 2SC3124 | Silicon NPN RF Transistor |
| 2SC3125 | Silicon NPN RF Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
