| Part Number | 2SC3127 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SC3127, 2SC3128, 2SC3510
Silicon NPN Epitaxial
Application
UHF/VHF wide band amplifier
Outline
MPAK 2SC3127
3 1 2
1. Emitter 2. Base 3. Collector
2SC3127, 2SC3128, 2SC3510
TO-92 (2) 2SC3128, 2SC.
BO I CBO hFE Cob fT PG NF Min 20 12 * * 30 * 3.5 * * Typ * * * * 90 0.9 4.5 10.5 2.2 Max * * 10 0.5 200 1.5 * * * pF GHz dB dB Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC . |
2SC3127 Datasheet and Specifications PDF
The 2SC3127 is a Silicon NPN Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC3127 Datasheet |
|---|---|
| Description | Silicon NPN RF Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz
APPLICATIONS ·Designed for use in low-noise and small signal amplifi.
10μA ; IE= 0
20
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; RBE= ∞
12
V
ICBO
Collector Cutoff Current
VCB= 12V; IE= 0
0.5
μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
10
μA
hFE
DC Current Gain
IC= 20mA ; VCE= 5V
30
200
fT
Current-Gain *Bandwidth Product IC= 20mA. |
| Part Number | 2SC3127 Datasheet |
|---|---|
| Description | Silicon NPN Epitaxial Transistor |
| Manufacturer | Renesas |
| Overview |
2SC3127
Silicon NPN Epitaxial
REJ03G0711-0300 (Previous ADE-208-1080A) Rev.3.00 Aug.10.2005
Application
UHF/VHF wide band amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 .
* * 30 * 3.5 * * Typ * * * * 90 0.9 4.5 10.5 2.2 Max * * 10 0.5 200 1.5 * * * Unit V V µA µA pF GHz dB dB Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 90. |