Renesas Electronics 2SC3127
Silicon NPN Epitaxial Transistor
| Part No. | 2SC3127 |
|---|---|
| Datasheet | 2SC3127 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 12 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.3.00 Aug 10, 2005 page 1 of 7 Free Datasheet 2SC3127ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO V(BR)CEO IEBO ICBO hFE Cob fT PG NF Min 20 12 — — 30 — 3.5 — — Typ — — — — 90 0.9 4.5 10.5 2.2 Max — — 10 0.5 200 1.5 — — — Unit V V µA µA pF GHz dB dB Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz V...
