Hitachi 2SC3127
Silicon NPN Transistor
| Part No. | 2SC3127 |
|---|---|
| Datasheet | 2SC3127 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC3127 * 1 20 12 3 50 150 150 –55 to +150 2SC3128 20 12 3 50 350 150 –55 to +150 2SC3510 20 12 3 50 600 150 –55 to +150 Unit V V V mA mW °C °C 1. Marking for 2SC3127 is “ID–”. 2 2SC3127, 2SC3128, 2SC3510ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE Cob fT PG NF Min 20 12 — — 30 — 3.5 — — Typ — — — — 90 0.9 4.5 10.5 2.2 Max — — 10 0.5 200 1.5 — — — pF GHz dB dB Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC...
