Inchange Semiconductor 2SC3127
Silicon NPN RF Transistor
| Part No. | 2SC3127 |
|---|---|
| Datasheet | 2SC3127 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHzAPPLICATIONS
●Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： Free Datasheet INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3127 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 12 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.5 μA IEBO Emitter Cutoff Current VEB= 3V; IC=...
