Datasheet4U Logo Datasheet4U.com

2SC3123 - Silicon NPN RF Transistor

General Description

Gce = 23dB TYP.

Cre = 0.4pF TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV VHF mixer applications.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3123 DESCRIPTION ·High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 25 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website:www.iscsemi.