| Part Number | 2SC3123 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SC3123 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3123 TV VHF Mixer Applications • • High conversion gain: Gce = 23dB (typ.) Low reverse transfer capacitance: Cre = 0.4 pF (typ.) Unit: . oshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics S Collector cut-off current Emitter cut-off curren. |
2SC3123 Datasheet and Specifications PDF
The 2SC3123 is a NPN Transistor.
Key Specifications
| Max Operating Temp | 125 °C |
|---|
| Part Number | 2SC3123 Datasheet |
|---|---|
| Description | Silicon NPN RF Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·High Conversion Gain
Gce = 23dB TYP. ·Low Reverse Transfer Capacitance
Cre = 0.4pF TYP. ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for.
ollector Cutoff Current
VCB= 25V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
20
V
0.1 μA
1.0 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
40
300
Cre
Reverse Transfer Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
fT
Current-Gain *Bandwidth Product IC= 5mA ; VCE= 10V 0.4 0.5 pF 900 140. |
| Part Number | 2SC3123 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon NPN Epitaxial 2SC3123 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low Reverse Transfer Capacitance : Cre=0.4F(TYP.) 0.5. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO. |