• Part: 2SC3122
  • Description: Silicon NPN Transistor
  • Manufacturer: Toshiba
  • Size: 140.01 KB
Download 2SC3122 Datasheet PDF
Toshiba
2SC3122
2SC3122 is Silicon NPN Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier Applications Unit: mm - High gain: Gpe = 24dB (typ.) (f = 200 MHz) - Low noise: NF = 2.0dB (typ.) (f = 200 MHz) - Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 150 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Symbo...