| Part Number | 2SC3180 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1263 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ollector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA . |
2SC3180 Datasheet and Specifications PDF
The 2SC3180 is a NPN Transistor.
| Part Number | 2SC3180 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3P(I) package ·Complement to type 2SA1263 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;c. e Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=5A; IB=0.5A IC=3A ; VCE=5V VCB=80V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V ;f=1MHz 55 35. |
| Part Number | 2SC3180 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Toshiba |
| Overview | SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SA1263 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25 C). . Complementary to 2SA1263 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperatu. |