| Part Number | 2SC3231 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min) ·Large Current Capability ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operatio.
Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 170V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
fT
Current-Gain *Bandwid. |
2SC3231 Datasheet
The 2SC3231 is a NPN Transistor.
| Part Number | 2SC3231 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220 package ·Wide area of safe operation APPLICATIONS ·Switching regulators ·General purpose power amplifiers ·TV horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to . or cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A; IB=0.4A VCB=200V;IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=0.5A ; VCE=5V 30 MIN 150 200 7 2SC3231 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX. |