2SC3299 Datasheet

The 2SC3299 is a SILICON POWER TRANSISTOR.

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Part Number2SC3299
ManufacturerSavantIC
Overview ·With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emi. nt DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA , IB=0 IC=3A; IB=0.15A IC=3A; IB=0.15A VCB=50V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=3A ; VCE=1V IE=0 ; VCB=10V,f=1MHz IC=1A ; VCE=4V 70 30 MIN 50 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT .
Part Number2SC3299
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1307 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A VB E(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.15A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC.
Part Number2SC3299
DescriptionSilicon NPN Transistor
ManufacturerToshiba
Overview :h SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES . Low Collector Saturation Voltage : VcE(sat)=0.4V(Max.) at Ic=3A , High Speed Switching Time : . . Low Collector Saturation Voltage : VcE(sat)=0.4V(Max.) at Ic=3A , High Speed Switching Time : t st g=l . 0/is(Typ . ) 10.3MAX.
*70 03.2±O.2 r 1/ / i < Aei j X < s rfl -H o r-' . Complementary to 2SA1307 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Volta.