2SC3852 Datasheet and Specifications PDF

The 2SC3852 is a Silicon NPN Transistor.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Max Operating Temp150 °C
Part Number2SC3852 Datasheet
ManufacturerSanken
Overview 2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A Unit VCBO 80 100 V VCEO 60 80 V VEBO 6 . ±0.2 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +-00..12 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) I C
* V CE Characteristics (Typical) 3 IB=12mA 8mA 5mA 2 3mA 2mA 1 1mA 0.5mA 0 0 1 2 3 4 5 6 Collector-Emitter Voltage VCE(V.
Part Number2SC3852 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220Fa package ·Low collector saturation voltage ·High hFE APPLICATIONS ·Driver for solenoid and motor,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitte. ut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ;IB=0 IC=2A ;IB=50mA VCB=80V; IE=0 VEB=6V; IC=0 IC=0.5A ; VCE=4V IC=0.2A ; VCE=12V f=1MHz;VCB=10V 200 MIN 60 SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE fT COB 2SC3852 TYP. MAX UNIT V 0.5 10 100 V µA.
Part Number2SC3852 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA 0.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 0.5A; VCE= 4V 200 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF fT Cur.

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