2SC4161 Datasheet and Specifications PDF

The 2SC4161 is a NPN Triple Diffused Planar Silicon Transistor.

2SC4161 integrated circuit image
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Part Number2SC4161 Datasheet
ManufacturerSANYO
Overview Ordering number:ENN2482 NPN Triple Diffused Planar Silicon Transistor 2SC4161 400V/7A Switching Regulator Applications Features · High breakdown voltage, high reliability. · High-speed switching (tf.
* High breakdown voltage, high reliability.
* High-speed switching (tf=0.1µs typ).
* Wide ASO.
* Adoption of MBIT process.
* Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4161] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Abso.
Part Number2SC4161 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·High breakdown voltage. ·High reliability. ·Fast switching speed APPLICATIONS ·Switching regulator applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline. Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ; RBE=8 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=400V.
Part Number2SC4161 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and r. ss otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE.