Datasheet Details
| Part number | 2SC4161 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.31 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4161-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC4161 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.31 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4161-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 3 A 2 W 30 150 ℃ -55~150 ℃ INCHANGE Semiconductor 2SC4161 isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4161 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
Compare 2SC4161 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4161 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SC4161 | SILICON POWER TRANSISTOR | SavantIC |
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