Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
- High Switching Speed
- Wide Area of Safe Operation
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for switching regulator and general purpose...
