2SC4163 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and genera

INCHANGE

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Datasheet Details

Part number	2SC4163
Manufacturer	INCHANGE
File Size	186.42 KB
Description	NPN Transistor
Datasheet	2SC4163 Datasheet
Additional preview pages of the 2SC4163 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.

Published: Sep 28, 2020 |