| Part Number | 2SC4163 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:ENN2484B
NPN Triple Diffused Planar Silicon Transistor
2SC4163
400V/12A Switching Regulator Applications
Features
· High breakdown voltage and high reliability. · High-speed switchin.
* High breakdown voltage and high reliability. * High-speed switching (tf=0.1µs typ). * Wide ASO. * Adoption of MBIT process. * Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4163] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications A. |
2SC4163 Datasheet and Specifications PDF
The 2SC4163 is a NPN Triple Diffused Planar Silicon Transistor.
| Part Number | 2SC4163 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·High breakdown voltage. ·High reliability. ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·Switching regulator applications PINNING PIN 1 2 3 Base Collector Emi. Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; RBE=9 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=8A ;. |
| Part Number | 2SC4163 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and r. ss otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VB. |