2SC4163 Overview
Description
With TO-220F package - High breakdown voltage. Fast switching speed - Wide area of safe operation APPLICATIONS - Switching regulator applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 12 25 4 40 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; RBE=9 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=8A ;IB=1.6A IC=8A ;IB=1.6A VCB=400V; IE=0 VEB=5V; IC=0 IC=1.6A ; VCE=5V IC=8A ; VCE=5V IC=10mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=1.6A ; VCE=10V 15 10 10 MIN 400 500 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT 2SC4163 TYP.
