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2SC4163 Datasheet PDF

Sanyo Electric 2SC4163

the 2SC4163 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Part No. 2SC4163
Datasheet 2SC4163 Download
Manufacturer
Sanyo Electric
Description NPN Triple Diffused Planar Silicon Transistor
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2SC4163 datasheet page 1 preview

APPLICATIONS

FEATURES

● High breakdown voltage and high reliability.
● High-speed switching (tf=0.1µs typ).
● Wide ASO.
● Adoption of MBIT process.
● Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4163] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCEO VEBO IC ICP IB Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions PW≤300µs, duty cycle≤10% Tc=25˚C 2.55 2.55 2.4 14.0 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Ratings 500 400 7 12 25 4 2 40 150 –55 to +150 Unit V V V A A A W W ˚C ˚C

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol Conditions ICBO IEBO VCB=400V, IE=0 VEB=5V, IC=0 Ratings min typ max Unit 10 µA 10 µA Continued on next page.
2SC4163 page 2 preview 2SC4163 page 3 preview