| Part Number | 2SC4332-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low collector saturation voltage ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable o. isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= 3A; IB= 150mA VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= 4A; IB=. |
2SC4332-Z Datasheet
The 2SC4332-Z is a Silicon NPN Power Transistor.
| Part Number | 2SC4332-Z |
|---|---|
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type NPN Silicon Epitaxia 2SC4332-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector saturation voltage. Fast switching speed. +0.2 9.70 -0.2 6.. Low collector saturation voltage. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 . |
| Part Number | 2SC4332-Z |
|---|---|
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Manufacturer | NEC |
| Overview |
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir.
a very low collector-to-emitter saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
PACKAGE DRAWING (Unit: mm)
FEATURES * Low collector sa. |